2SJ526 डाटा शीट PDF( Datasheet )

2SJ526 Silicon P Channel MOS FET High Speed Power Switching ADE-208-579B (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • H

isc P-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 110mΩ@10V ·Fast Switching Speed ·Low drive current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d