2SJ50 डाटा शीट PDF( Datasheet )

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Ordering number:ENN5948A P-Channel Silicon MOSFET 2SJ501 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2

Ordering number:ENN6178A P-Channel Silicon MOSFET 2SJ502 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2091A [2SJ

Ordering number:ENN5932 P-Channel Silicon MOSFET 2SJ503 DC/DC Converter Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2083B [2SJ503] 6.5 5.

2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive device

2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gat

2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gat