डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SJ496 | P-Channel MOSFET 2SJ496
Silicon P-Channel MOS FET High Speed Power Switching
ADE-208-482 1st. Edition Features
• Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Lar |
Hitachi Semiconductor |
|
2SJ49 | P-Channel MOSFET | Hitachi Semiconductor |
|
2SJ494 | P-Channel MOSFET | NEC |
|
2SJ493 | P-Channel MOSFET | NEC |
|
2SJ496 | P-Channel MOSFET | Hitachi Semiconductor |
|
2SJ492 | P-Channel MOSFET | NEC |
|
2SJ499 | P-Channel MOSFET | Sanyo Semicon Device |
|
2SJ495 | P-Channel MOSFET | NEC |
www.DataSheet.in | 2017 | संपर्क |