डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SJ49 | P-Channel MOSFET This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
|
Hitachi Semiconductor |
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2SJ492 | P-Channel MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ492
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SJ492 2SJ492-S 2SJ492-ZJ PACKAGE TO-220AB TO-262 TO-263
DESCRIPTION
This produ |
NEC |
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2SJ493 | P-Channel MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ493
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SJ493 PACKAGE Isolated TO-220
DESCRIPTION
This product is P-Channel MOS Field |
NEC |
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2SJ494 | P-Channel MOSFET DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for high current switching app |
NEC |
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2SJ495 | P-Channel MOSFET DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ495
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for high current switching app |
NEC |
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2SJ496 | P-Channel MOSFET 2SJ496
Silicon P-Channel MOS FET High Speed Power Switching
ADE-208-482 1st. Edition Features
• Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Lar |
Hitachi Semiconductor |
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2SJ499 | P-Channel MOSFET Ordering number : ENN6589
2SJ499
P-Channel Silicon MOSFET
2SJ499
Load Switching Applications
Features
• •
Package Dimensions
unit : mm 2083B
[2SJ499]
6.5 5.0 4
1.5
Low ON-state resistance. 4V drive.
2. |
Sanyo Semicon Device |
www.DataSheet.in | 2017 | संपर्क |