2SJ48 डाटा शीट PDF( Datasheet )

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2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features • Low on-resistance R DS(on) = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Larg

2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High spee

Ordering number:ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2083B [2SJ4

2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. �

2SJ486 Silicon P Channel MOS FET Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small packa