डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SJ389S | P-Channel MOSFET isc P-Channel MOSFET Transistor
2SJ389S
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤135mΩ(@VGS= -10V; ID= -5A) ·High speed switching ·Low drive current ·100% avalanche tested ·Minimum Lot- |
INCHANGE |
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2SJ389S | P-Channel MOSFET | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |