डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD993 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 10V(Max.)@ IC= 2.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot v |
INCHANGE |
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2SD998 | SILICON POWER TRANSISTOR | SavantIC |
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2SD998 | NPN Transistor | INCHANGE |
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2SD999 | NPN Silicon Transistor | NEC |
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2SD999 | NPN Silicon Transistor | GME |
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2SD999 | NPN Transistor | Jin Yu Semiconductor |
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2SD995 | NPN Transistor | Sanyo Semicon Device |
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2SD999 | NPN EPITAXIAL SILICON TRANSISTOR | WEJ |
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2SD992-Z | NPN Silicon Transistor | NEC |
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2SD993 | NPN Transistor | INCHANGE |
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2SD999 | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
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