डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD970 | NPN Transistor isc Silicon NPN Darlington Power Transistor
2SD970
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 4A ·Low Saturation Voltage ·Complemen |
INCHANGE |
|
2SD970 | Silicon NPN Transistor 2SD970(K)
Silicon NPN Triple Diffused
Application
Medium speed and power switching complementary pair with 2SB791(K)
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
2 kΩ (Typ)
200 |
Hitachi Semiconductor |
|
2SD970 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD970
www.datasheet4u.com
DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON ·Complement to type 2SB791 APPLI |
SavantIC |
|
2SD970K | Silicon NPN Transistor 2SD970(K)
Silicon NPN Triple Diffused
Application
Medium speed and power switching complementary pair with 2SB791(K)
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
2 kΩ (Typ)
200 |
Hitachi Semiconductor |
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