डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD961 | Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A ·Complement to |
Inchange Semiconductor |
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2SD965 | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SD966 | Silicon NPN epitaxial planer type Transistor | Panasonic Semiconductor |
|
2SD965 | Transistor | UTC |
|
2SD965T | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
|
2SD965A | Transistor | UTC |
|
2SD965A | NPN Transistor | SeCoS |
|
2SD965 | Transistor | GME |
|
2SD965A | Transistor | Jiangsu |
|
2SD969 | Silicon PNP epitaxial planer type Transistor | Panasonic Semiconductor |
|
2SD966 | Silicon NPN Transistor | Panasonic Semiconductor |
www.DataSheet.in | 2017 | संपर्क |