2SD92 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SD92 | NPN Transistor www.DataSheet4U.com
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 ETC |
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| 2SD920 | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD920
DESCRIPTION ·High DC Current Gain
: hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 200V(Mi |
 INCHANGE |
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| 2SD921 | Transistor 2SD921
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR INDUSTRIAL USE POWER SUPPLY
FUJI POWER TRANSISTOR
Outline Drawings
TO-3P
Features
Ultra high β Excellent linearity in hFE
www.DataSheet4U.com
Exc |
 Fuji |
|
| 2SD923 | Transistor 2SD923
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR INDUSTRIAL USE POWER SUPPLY
FUJI POWER TRANSISTOR
Outline Drawings
TO-3P
Features
Ultra high β
www.DataSheet4U.com
Excellent linearity in hFE Exc |
Fuji |
|
| 2SD928 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD928
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 3. |
INCHANGE |
|
| 2SD929 | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD929
DESCRIPTION ·High DC Current Gain
: hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 180V(Mi |
INCHANGE |
शेयर लिंक :
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