डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD917 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
per |
INCHANGE |
|
2SD917 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD917
www.datasheet4u.com
DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Large collector power dissipatio |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |