2SD91 डाटा शीट PDF( Datasheet )

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD911 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Current Capability ·Good Linearity of hFE ·High Reliability ·Wi

isc Silicon NPN Darlington Power Transistor 2SD916 DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable ope

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device per

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD917 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Large collector power dissipatio