2SD90 डाटा शीट PDF( Datasheet )

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD900 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC=

isc Silicon NPN Power Transistor 2SD904 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 3A ·Built-in Damper Diode ·Minimum Lot-to-Lo

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD905 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage power switch

isc Silicon NPN Power Transistor 2SD907 DESCRIPTION ·High Collector Current ·Good Linearity of hFE ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performa