डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD884 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 0.5A ·High speed switching ·Mi |
INCHANGE |
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2SD884 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD884
www.datasheet4u.com
DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Large PC APPLICATIONS ·For horizontal d |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |