2SD880 डाटा शीट PDF( Datasheet )

NPN Epitaxial Silicon Transistor FEATURES  Low frequency power amplifier.  Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature r

UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Curr

isc Silicon NPN Power Transistor 2SD880 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A ·Complement to Type

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD880 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLI

2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Low frequency power amplifier * Complement to 2SB834 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 M

TIGER ELECTRONIC CO.,LTD 2SD880 / 2SB834 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitt

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD880-Q 2SD880-Y 2SD880-GR NPN Silicon Power Transistor