डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD864 | Power Transistor isc Silicon NPN Darlington Power Transistor
2SD864
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturat |
Inchange Semiconductor |
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2SD863 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
|
2SD869 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD869 | NPN Transistor | Toshiba |
|
2SD864 | Power Transistor | Inchange Semiconductor |
|
2SD867 | NPN Transistor | Toshiba |
|
2SD860 | Power Transistor | Inchange Semiconductor |
|
2SD861 | Silicon NPN Transistor | Inchange Semiconductor |
|
2SD867 | NPN Transistor | INCHANGE |
|
2SD866 | NPN Transistor | INCHANGE |
|
2SD869 | NPN Transistor | INCHANGE |
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