डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD849 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device
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INCHANGE |
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2SD849 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD849
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Line-operated horizontal defl |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |