डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD812 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB747 ·Minimum Lot-to-Lot v |
INCHANGE |
|
2SD811 | Silicon NPN Transistor | Toshiba |
|
2SD817 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD818 | Silicon NPN Power Transistor | INCHANGE |
|
2SD811 | NPN Transistor | INCHANGE |
|
2SD814 | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SD812 | NPN Transistor | INCHANGE |
|
2SD814A | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SD819 | NPN Transistor | INCHANGE |
|
2SD818 | NPN Transistor | Toshiba |
|
2SD817 | NPN Transistor | INCHANGE |
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