2SD686 डाटा शीट PDF( Datasheet )

:) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High DC Current Gain : hpE=2000 (Min. (Vce=2V,Ic=1A)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD686 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB676 ·DARLINGTON ·High DC current gain APPL

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Low Collector-Emitter Saturation Voltage