डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD683 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·High DC Current Gain-
: hFE= 500(Min.)@ IC= 5A ·Minimum Lot-to-Lot variations for robus |
INCHANGE |
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2SD683A | Silicon NPN Transistor w
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Toshiba |
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