डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD676 | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·High Power Dissipation-
: PC= 125W(Max)@TC=25℃ ·Complement to Type 2SB656 ·Minimum Lot-to-Lot va |
INCHANGE |
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2SD677 | NPN Power Transistor | Fuji |
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2SD670 | NPN Transistor | INCHANGE |
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2SD675 | NPN Transistor | INCHANGE |
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2SD676 | NPN Transistor | INCHANGE |
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2SD679 | NPN Transistor | INCHANGE |
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2SD673 | NPN Transistor | INCHANGE |
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