2SD669A डाटा शीट PDF( Datasheet )

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum

UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A  ORDERING IN

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to

2SD669AD Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.  特征 / Features 与 2SB649AD 互补。 Complem

Elektronische Bauelemente 2SD669AT 1.5A, 180V NPN Plastic Encapsulated Transistor FEATURES Low frequency power amplifier RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free CLASSIFICAT

SMD Power Transistor (NPN) 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Da