डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD649 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD649
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability
APPLICATIONS ·Designed for line-operated |
Inchange Semiconductor |
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2SD642 | Silicon NPN Transistor | ETC |
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2SD649 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD647A | Silicon NPN Transistor | Toshiba |
|
2SD641 | Silicon NPN Transistor | Toshiba |
|
2SD641 | SILICON POWER TRANSISTOR | SavantIC |
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2SD648A | Silicon NPN Transistor | Toshiba |
|
2SD641 | NPN Transistor | INCHANGE |
|
2SD640 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |