डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD556 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD556
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V (Min) ·Wide Area of Safe Operation ·High Power ·High Current Capability · |
INCHANGE |
|
2SD551 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD555 | Silicon NPN Power Transistors | SavantIC |
|
2SD553 | NPN Transistor | Toshiba Semiconductor |
|
2SD553 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD552 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD556 | NPN Transistor | INCHANGE |
|
2SD557 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD552 | NPN Transistor | Toshiba |
|
2SD555 | NPN Transistor | INCHANGE |
|
2SD554 | NPN Transistor | INCHANGE |
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