2SD525 डाटा शीट PDF( Datasheet )

SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE ( sat )=2.0V(Max. • Complementary to 2SB595. • Reco

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD525 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Lo

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4.0A ·Complement to Type 2SB595