डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD523 | NPN Transistor SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : h FE=2000 (Min.) (V CE =3V, I C =3A) • Low Saturation Voltage : vCE(sat)=l-5V (Max.) |
Toshiba |
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2SD523 | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown VCE=80V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage-
: VCE (sat)= 1.5V(Max.)@ |
Inchange Semiconductor |
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