डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD458 | Silicon NPN Power Transistors isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Power Dissipation-
: PC= 80W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device
pe |
Inchange Semiconductor |
|
2SD458 | Silicon NPN Power Transistors | Inchange Semiconductor |
|
2SD45 | NPN Transistor | INCHANGE |
|
2SD459 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |