2SD45 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD45 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device pe

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD459 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Saturat