डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD389 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device |
INCHANGE |
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2SD389A | Si NPN Transistor www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
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Panasonic Semiconductor |
www.DataSheet.in | 2017 | संपर्क |