डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD363 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector Power Dissipation-
: PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust dev |
Inchange Semiconductor |
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2SD362 | Silicon NPN Power Transistors | SavantIC |
|
2SD361 | NPN Transistor | ETC |
|
2SD360 | (2SD359 / 2SD360) NPN Transistor | ETC |
|
2SD363 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD362 | NPN Transistor | INCHANGE |
|
2SD365 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |