2SD313 डाटा शीट PDF( Datasheet )

UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. NPN SILICON TRANSISTOR 1 TO-220 *

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD313 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLI

2SD313 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 低电流低电压。 Low Current

NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 COLLECTOR 2 BASE 1

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SD313 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general-purpose amplifier and switching applications. Pinning 1

isc Silicon NPN Power Transistor 2SD313 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type