डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD299 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD299
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= |
INCHANGE |
|
2SD2901 | NPN Transistor | INCHANGE |
|
2SD2908 | Transistor | Jiangsu Changjiang Electronics |
|
2SD2908 | Transistor | GME |
|
2SD299 | NPN Transistor | INCHANGE |
|
2SD2908 | NPN EPITAXIAL SILICON TRANSISTOR | WEJ |
|
2SD291 | NPN Transistor | INCHANGE |
|
2SD297 | NPN Transistor | INCHANGE |
|
2SD2908 | Transistor | Bruckewell |
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