डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD291 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD291
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 40V(Min) ·Collector Power Dissipation-
: PC= 18W @TC= 25℃ ·Minimum Lot-to-Lot |
INCHANGE |
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2SD2901 | NPN Transistor | INCHANGE |
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2SD2908 | Transistor | Jiangsu Changjiang Electronics |
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2SD2908 | Transistor | GME |
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2SD2908 | NPN EPITAXIAL SILICON TRANSISTOR | WEJ |
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2SD299 | NPN Transistor | INCHANGE |
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2SD291 | NPN Transistor | INCHANGE |
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2SD297 | NPN Transistor | INCHANGE |
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2SD2908 | Transistor | Bruckewell |
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