डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2642 | Silicon NPN Transistor Equivalent circuit
C
Darlington
2SD2642
sElectrical Characteristics
Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 1 |
Sanken Electric |
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2SD2642 | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Vol |
Inchange Semiconductor |
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