2SD259 डाटा शीट PDF( Datasheet )

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.2 (Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Transistor 2SD2598 0.15 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 q q q Forwa

2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 8 V (Max.) l High Sp

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2599 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low saturation voltage ·Bult-in dam

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust dev