डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD258 | (2SD256 - 2SD259) NPN Transistor www.DataSheet4U.com
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ETC |
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2SD2580 | NPN Triple Diffused Planar Silicon Transistor Ordering number:5796
NPN Triple Diffused Planar Silicon Transistor
2SD2580
Color TV Horizontal Deflection Output Applications
Features
· High speed. · High breakdown voltage (VCBO=1500V). · High reliabilit |
Sanyo Semicon Device |
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2SD2580 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2580
www.datasheet4u.com
DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in |
SavantIC |
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2SD2580 | Silicon NPN Power Transistors isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
pe |
Inchange Semiconductor |
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2SD2581 | NPN Triple Diffused Planar Silicon Transistor Ordering number:5818
NPN Triple Diffused Planar Silicon Transistor
2SD2581
Color TV Horizontal Deflection Output Applications
Features
· High speed. · High breakdown voltage (VCBO=1500V). · High reliabilit |
Sanyo Semicon Device |
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2SD2581 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable o |
INCHANGE |
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2SD2582 | NPN Transistor DATA SHEET
SILICON TRANSISTOR
2SD2582
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS
FEATURES
• Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA)
3.8 ± 0.2 (0.149)
PACKAGE |
NEC |
www.DataSheet.in | 2017 | संपर्क |