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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2562 | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Vol |
Inchange Semiconductor |
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2SD2562 | Silicon NPN Transistor 2SD2562 Darlington
Equivalent circuit C B
(70Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649)
Application : Audio, Series Regulator and General Purpose
sAbsolute maximum rat |
Sanken |
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