2SD256 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Collector Power Dissipation- : PC= 25W @TC= 25℃ ·Minimum Lot-to-Lot

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Vol

2SD2560 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application : Audio, Series Regulator and General Purpose sAbsolute maximum rat

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2560 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1647 APPLICATIONS ·Audio ,regula

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Vo

Equivalent circuit C Darlington 2SD2561 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VC

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Vol