2SD2559 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust de

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2559 2SD2559 Horizontal Deflection Output for Color TV · High voltage: VCBO = 1500 V · Low saturation voltage: VCE (sat) = 5 V (max) · Bult-in d