डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2558 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·High DC Current Gain-
: hFE= 1500( Min.) @(IC= 1A, VCE= 5V) ·Low Collector Saturation Vol |
INCHANGE |
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2SD2558 | Silicon NPN Transistor Equivalent circuit
C
Darlington
2SD2558
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=–0.5A VCB=10V, f |
Sanken electric |
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