2SD2557 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 1A, VCE= 5V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·Minimum Lot-to-Lot variations f

Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2557 200 200 6 5 2 70(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD2557 sElectrical C

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2557 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·DARLINGTON APPLICATIONS ·Series regulator and general