2SD2553 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust dev

2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage z Low Saturation Vol

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2553 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low saturation voltage ·Bult-in dam

TIGER ELECTRONIC CO.,LTD SILICON NPN TRIPLE DIFFUSED MESA TYPE DESCRIPTION HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Product specification 2SD2553 A