2SD2549 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltgae- : VCE(sat)= 0.7V(Max.)@ IC= 3A ·Good Linearity of hFE ·Minimum Lot

Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit: mm s Features q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low co