2SD254 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD254 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 70V(Min) ·Collector Power Dissipation- : PC= 20W @TC= 25℃ ·Minimum Lot-to-Lot

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Power Transistors 2SD2544 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltgae- : VCE(sat)= 0.7V(Max.)@ IC= 3A ·Good Linearity of hFE ·Minimum Lot

Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit: mm s Features q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low co