2SD2495 डाटा शीट PDF( Datasheet )

Equivalent circuit C Darlington 2SD2495 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2495 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·Complement to type 2SB1626 APPLICATIONS ·For audio,se

isc Silicon NPN Darlington Power Transistor 2SD2495 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Satur