2SD2493 डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Vol

Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2493 110 110 5 6 1 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD2493 sElectrical C

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2493 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1624 APPLICATIONS ·Audio ,series