डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2449 | Silicon NPN Transistor 2SD2449
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2449
Power Amplifier Applications
Unit: mm
• High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB |
Toshiba Semiconductor |
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2SD2449 | Silicon NPN Darlington Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·High DC Current Gain-
: hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Volt |
Inchange Semiconductor |
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