डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2422 | Silicon NPN Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @IC= 3A ·High DC Current Gai |
Inchange Semiconductor |
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2SD2428 | NPN Transistor | ETC |
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2SD2423 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD2422 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SD2426 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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2SD2425 | NPN Silicon Epitaxial Transistor | NEC Electronics |
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2SD2420 | Silicon NPN Transistor | Panasonic Semiconductor |
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