डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2406 | Silicon NPN Transistor TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2406
Power Amplifier Applications
2SD2406
Unit: mm
• High power dissipation: PC = 25 W (Tc = 25°C) • Good hFE linearity
Absolute Maximum Ratings (T |
Toshiba Semiconductor |
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2SD2406 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃ ·Good Linearity of hFE ·Minimum Lot-to-Lot variati |
INCHANGE |
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