2SD2389 डाटा शीट PDF( Datasheet )

Equivalent circuit C Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2389 160 150 5 8 1 80(Tc=25°C) 150 –55 to +150 2SD2389 sElectrical Characteristics Symbol ICBO IEBO V(BR

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2389 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1559 ·High DC current gain APPLI

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 4V) ·Low Collector Saturation Vol